Japanese DRAM (Dynamic Random Access Memory) provider Elpida Memory said on December 22 that it has begun mass production of 2Gb DDR3 (Double Data Rate Three) SDRAM (Synchronous DRAM) on the 40nm process at its Hiroshima facility, Nikkei reported. Compared with the existing 50nm DDR3 SDRAM, Elpida's new 40nm process enables 44% more output of chips per wafer as well as 100% yield for DDR3 products capable of operating at 1.6Gbps, reportedly the fastest speed for DDR3 at present. Elpida plans to expand production of the new 40nm 2Gb DDR3 SDRAM at the Hiroshima facility in phases. In order to further boost production volume, manufacturing of 40nm process products is slated to commence at Rexchip Electronics, Elpida's affiliate in Taiwan, beginning in the second quarter of 2010. Elpida may also transfer the 40nm process technology to Taiwanese foundry partners ProMOS Technologies and Winbond Electronics should conditions in the DRAM market warrant further production expansion.